Integra Technologies are excited to release a new RF power amplifier module/pallet designed to solve various size, weight, power, and cost challenges (SWaP-C) in high-performance L-band avionic systems.
The IGNP1011L2400 is a high power GaN-on-SiC RF power amplifier module/pallet that has been designed specifically for IFF/SSR systems operating under either Mode S ELM (48x {32μs on, 18μs off}, 6.4% Long Term Duty Cycle) or standard Mode S (128μs, 2% Duty Cycle) pulse conditions.
It supplies a minimum of 2200W of peak output power, with typically >16 dB of gain and 57% efficiency and operates from a 50V supply voltage. This RF power amplifier module/pallet is matched to 50-ohms at both input and output and is suitable for both 1030 and 1090 MHz.
The IGNP1011L2400 is a high power GaN-on-SiC RF power amplifier module/pallet that has been designed specifically for IFF/SSR systems operating under either Mode S ELM (48x {32μs on, 18μs off}, 6.4% Long Term Duty Cycle) or standard Mode S (128μs, 2% Duty Cycle) pulse conditions.
It supplies a minimum of 2200W of peak output power, with typically >16 dB of gain and 57% efficiency and operates from a 50V supply voltage. This RF power amplifier module/pallet is matched to 50-ohms at both input and output and is suitable for both 1030 and 1090 MHz.
Features
Applications
Click Here to download the full Product Datasheet.
- GaN on SiC HEMT Transistor Technology
- Matched to 50W at both input and output
- Suitable for both 1030 and 1090 MHz
- 100% RF Tested Under Mode S ELM pulse conditions
Applications
- L-band Avionics IFF & SSR Systems
- Suitable for both uplink and downlink (Transponder)
- Suitable for both Standard Mode S and Mode S ELM applications
Click Here to download the full Product Datasheet.