Integra Technologies, a leading designer and supplier of high-power RF and microwave transistors and amplifiers, offers a IFF avionics transistor offering 120 W peak output power using GaN/SiC technology.
Designed for IFF avionic applications, IGN1011L120 is a high power GaN transistor, specified for use under Class AB operation. This transistor operates at 1.03 - 1.09 GHz, and supplies a minimum of 120W of peak pulse power, at 50V bias voltage and 6.4% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
Designed for IFF avionic applications, IGN1011L120 is a high power GaN transistor, specified for use under Class AB operation. This transistor operates at 1.03 - 1.09 GHz, and supplies a minimum of 120W of peak pulse power, at 50V bias voltage and 6.4% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
- GaN on SiC HEMT Technology
- POUT-PK ≥ 120W @ 48 X 32us ON, 18us OFF/6.4% DC / 50V
- 1.030 and 1.090 GHz Operating Frequency
- Internal Impedance Pre-matched Device
- Depletion Mode Device
- Negative Gate Voltage and Bias Sequencing Required
- Specified For Use Under Class AB Operation
- Metal Based Package Sealed With Ceramic-Epoxy Lid
- Gold Metallization System: Chip - Wire Bond - Package
- Package Size: W=0.800″ (20.32mm), L=0.400″ (10.16mm)
- 100% High Power RF Tested in Broadband RF Test Fixture
Click Here to download the full product datasheet.