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New IGN5259M80R2 C-Band Radar Transistor Operating at 5.2-5.9 GHz from Integra...

29/1/2019

 
IGN5259M80R2 is a high power GaN transistor, best suited for C-band radar applications. Specified for use under Class AB operation, this transistor operates at 5.2-5.9 GHz of operating frequency, a minimum of 80W of peak output power, 50V, and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallisation, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

Features
  • GaN on SiC HEMT Technology
  • 80W Output Power
  • Class AB Operation
  • Pre-matched Internal Impedance
  • 100% High Power RF Tested
  • Negative Gate Voltage/Bias Sequencing

Applications
  • C-Band Radar
Picture
Click Here to download the full Product Datasheet.

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