New IGN5259M80R2 C-Band Radar Transistor Operating at 5.2-5.9 GHz from Integra...

IGN5259M80R2 is a high power GaN transistor, best suited for C-band radar applications. Specified for use under Class AB operation, this transistor operates at 5.2-5.9 GHz of operating frequency, a minimum of 80W of peak output power, 50V, and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallisation, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

Features

• GaN on SiC HEMT Technology
• 80W Output Power
• Class AB Operation
• Pre-matched Internal Impedance
• 100% High Power RF Tested
• Negative Gate Voltage/Bias Sequencing

Applications

• C-Band Radar

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